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DRV8306HRSMR

IC MTR DRV MULTIPHAS 6-38V 32QFN

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有关产品详细信息,请参阅产品规格。

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DRV8306HRSMR

IC MTR DRV MULTIPHAS 6-38V 32QFN

订单满$200即可获赠限量版中式礼品一份.

订单满$200即可获赠限量版中式礼品一份.

订单金额超过 1000 美元可减免 30 美元运费.

超过 5000 美元的订单可免运费和交易费.

这些优惠适用于新客户和现有客户,有效期为2024年1月1日至2024年12月31日.

  • 制造商:

    TI

  • 规格书:

    DRV8306HRSMR datasheet

  • 包装/箱:

    VQFN-32

  • 产品分类:

    射频集成电路

  • RoHS Status: RoHS 状态 Lead free/RoHS Compliant

现在提交您的报价请求,我们期望在 六月 14, 2024内提供报价。现在就下订单,我们期望在 六月 19, 2024内完成交易。时间是格林威治标准时间+8:00。

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我们的承诺是在12小时内提供及时的报价。如需进一步帮助,请联系我们: sales@censtry.com.

DRV8306HRSMR 产品详情

1 Features

• Triple Half-Bridge Gate Driver

– Drives High-Side and Low-Side N-Channel MOSFETs

– Supports 100% PWM Duty Cycle

• Smart Gate Drive Architecture

– Adjustable Slew-Rate Control

– 15-mA to 150-mA Peak Source Current

– 30-mA to 300-mA Peak Sink Current

• Integrated Gate Driver Power Supplies

– High-Side Charge Pump

– Low-Side Linear Regulator

• 6 to 38-V Operating Voltage Range

– 40-V Absolute Maximum Rating

• Integrated Commutation from Hall Sensors

– 120° Trapezoidal Current Control

– Low-Cost Hall Elements Input

– Tacho Output Signal (FGOUT) for Closed Loop Speed Control

• Cycle-by-Cycle Current Limit

• Supports 1.8-V, 3.3-V, and 5-V Logic Inputs

• Low-Power Sleep Mode

• Linear Voltage Regulator, 3.3 V, 30 mA

• Compact VQFN Package and Footprint

– 4-mm × 4-mm, 32-Pin VQFN Package

• Integrated Protection Features

– VM Undervoltage Lockout (UVLO)

– Charge Pump Undervoltage (CPUV)

– MOSFET Overcurrent Protection (OCP)

– Gate Driver Fault (GDF)

– Thermal Shutdown (OTSD)

– Fault Condition Indicator (nFAULT)


2 Applications

• BLDC Motor Modules

• Service Robots and Service Robotics

• Vacuum Cleaners

• Drones, Robotics, and RC Toys

• White Goods

• ATM and Currency Counting


3 Description

The DRV8306 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving highside and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability.

The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (BRK) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closedloop control of BLDC motor.

A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin.

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Request a quote DRV8306HRSMR at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of DRV8306HRSMR in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:sales@censtry.com.
The price and lead time for DRV8306HRSMR depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

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