IMD3A

The EMD3 / UMD3N / IMD3A transistors have an epitaxial planar type structure and are NPN / PNP silicon transistors with built-in resistor type. The transistor elements are independent, which eliminates interference. The structure allows for mounting with EMT 3 or UMT 3 or SMT 3 automatic mounting machines, cutting mounting cost and area in half. Both the DT A114E chip and DTC114E chip are included in an EMT or UMT or SMT package. The DTr1 and DTr2 have equivalent circuits with specific resistor values

The EMD3 / UMD3N / IMD3A transistors have the following features mentioned in the document: 1) Both the DT A114E chip and DTC114E chip are included in an EMT, UMT, or SMT package. 2) Mounting is possible with EMT 3, UMT 3, or SMT 3 automatic mounting machines. 3) The transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. EMD3 / UMD3N / IMD3A Transistors.

The absolute maximum ratings for the EMD3 / UMD3N / IMD3A transistors at a temperature of 25°C are as follows: - Supply voltage (VCC): 50V - Input voltage (VIN): -10V to 40V - Output current (IO): 50mA - Junction temperature (Tj): 150°C - Storage temperature (Tstg): -55°C to +150°C - Power dissipation (Pd): EMD3, UMD3N 150mW (TOTAL), IMD3A 300mW (TOTAL)