规格书 替换方案
询价 / 物料清单 0 登入 / 注册
选择您的位置
Back to top

 

FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

FDS6675BZ
  • FDS6675BZ
  • play
    product video

图片仅供参考.
有关产品详细信息，请参阅产品规格。

社交媒体

FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

  • 制造商:

    onsemiconductor

  • 规格书:

    FDS6675BZ datasheet

  • 包装/箱:

    8-SOIC (0.154", 3.90mm Width)

  • 产品分类:

    衬套，扣眼

  • RoHS Status: RoHS 状态 Lead free/RoHS Compliant

现在提交您的报价请求，我们期望在 十月 18, 2026内提供报价。现在就下订单，我们期望在 十月 21, 2026内完成交易。时间是格林威治标准时间+8:00。

认证 :
支付 :
jcb American express tt discover paypal

库存 : 19683 PCS

我们的承诺是在12小时内提供及时的报价。如需进一步帮助，请联系我们： sales@censtry.com.

FDS6675BZ 替代型号

图片和零件编号 制造商 包装/箱 产品分类 规格书 库存 询价
Blue Rocket SOP-8 衬套，扣眼 1016

FDS6675BZ 产品详情

Request a quote FDS6675BZ at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of FDS6675BZ in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:sales@censtry.com.
The price and lead time for FDS6675BZ depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

FDS6675BZ

Description

The FDS6675BZ is a high-performance P-channel PowerTrench MOSFET designed for efficient power usage in various applications. Key features include low drain-to-source on-resistance (rDS(on)), extended voltage range (-25V), and built-in ESD protection. This MOSFET is suitable for power-intensive circuits, ensuring reliable performance with a compact design.

Features

The FDS6675BZ P-Channel PowerTrench MOSFET features key attributes for efficient performance:
Low R_DS(on): At -10V V GS, it reaches 13mΩ, demonstrating excellent power handling.
Extended voltage range: Capable of operating at -25V, suitable for battery applications.
ESD protection: HBM level of 5.4 KV provides robust protection against electrostatic discharge.
High-performance trench technology: Ensures low on-resistance, crucial in high-efficiency designs. These features make the FDS6675BZ an ideal choice for applications requiring efficient power management and high reliability.

Package

The FDS6675BZ has an 8-SoIC (Small Outline Chip) package, which measures 0.154" by 3.90mm width.

Pinout

The FDS6675BZ is a P-Channel PowerTrench MOSFET. It doesn't specify a pin count, as the count would depend on the package (8-SOIC in this case). However, typical MOSFET packages have fewer than ten pins, connecting the gate and drain to the source and package. For more detailed information on the functions of each pin, consult the manufacturer's datasheet or contact their support.

Applications

The FDS6675BZ is a power MOSFET suitable for applications demanding high efficiency, reliable performance, and compact designs. It finds application in power electronics, battery management systems, and motor control systems.

Equivalent

The equivalent product of FDS6675BZ by onsemi is likely another P-Channel PowerTrench MOSFET with similar voltage and current ratings. Search for onsemi's MOSFET offerings within the same voltage range (-30V).

FDS6675BZ 相关产品

  • 制造商 库存 规格书
  • FDS6990A FDS6990A

    onsemiconductor

    1968 PCS

    FDS6990A .PDF

  • MMBT5179 MMBT5179

    onsemiconductor

    6406 PCS

    MMBT5179 .PDF

  • FAN7393AMX FAN7393AMX

    onsemiconductor

    19642 PCS

    FAN7393AMX .PDF

  • FAN73933M FAN73933M

    onsemiconductor

    0 PCS

    FAN73933M .PDF

FDS6675BZ 热门产品

质量保证

了解更多

Censtry 很荣幸获得 ISO 9001:2015 认证。我们致力于提供授权正品组件。我们的内部实验室配备了齐全的测试设备，以确保严格的质量控制措施。我们为所有销售的商业组件提供完全可追溯性。

退货政策

了解更多

Censtry 提供 365 天保修。对于退回的商品，如果有库存，我们将更换，如果没有，我们将退款。