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FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

FDS6675BZ
  • FDS6675BZ
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FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

  • 制造商：

    onsemiconductor

  • 规格书：

    FDS6675BZ datasheet

  • 包装/箱：

    8-SOIC (0.154", 3.90mm Width)

  • 产品分类：

    衬套，扣眼

  • RoHS Status： RoHS 状态 Lead free/RoHS Compliant

现在提交您的报价请求，我们期望在 五月 12, 2026内提供报价。现在就下订单，我们期望在 五月 15, 2026内完成交易。时间是格林威治标准时间+8:00。

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库存：19683 PCS

我们的承诺是在12小时内提供及时的报价。如需进一步帮助，请联系我们： sales@censtry.com.

FDS6675BZ 替代型号

图片和零件编号 制造商 包装/箱 产品分类 规格书 库存 询价
Blue Rocket SOP-8 衬套，扣眼 1016

FDS6675BZ 产品详情

Request a quote FDS6675BZ at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of FDS6675BZ in stock for sale, check stock quantity and pricing, view product specifications, and order contact us：sales@censtry.com.
The price and lead time for FDS6675BZ depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

FDS6675BZ

Description

The FDS6675BZ is a high-performance P-channel PowerTrench MOSFET designed for efficient power usage in various applications. Key features include low drain-to-source on-resistance (rDS(on)), extended voltage range (-25V), and built-in ESD protection. This MOSFET is suitable for power-intensive circuits, ensuring reliable performance with a compact design.

Features

The FDS6675BZ P-Channel PowerTrench MOSFET features key attributes for efficient performance:
Low R_DS(on): At -10V V GS, it reaches 13mΩ, demonstrating excellent power handling.
Extended voltage range: Capable of operating at -25V, suitable for battery applications.
ESD protection: HBM level of 5.4 KV provides robust protection against electrostatic discharge.
High-performance trench technology: Ensures low on-resistance, crucial in high-efficiency designs. These features make the FDS6675BZ an ideal choice for applications requiring efficient power management and high reliability.

Package

The FDS6675BZ has an 8-SoIC (Small Outline Chip) package, which measures 0.154" by 3.90mm width.

Pinout

The FDS6675BZ is a P-Channel PowerTrench MOSFET. It doesn't specify a pin count, as the count would depend on the package (8-SOIC in this case). However, typical MOSFET packages have fewer than ten pins, connecting the gate and drain to the source and package. For more detailed information on the functions of each pin, consult the manufacturer's datasheet or contact their support.

Applications

The FDS6675BZ is a power MOSFET suitable for applications demanding high efficiency, reliable performance, and compact designs. It finds application in power electronics, battery management systems, and motor control systems.

Equivalent

The equivalent product of FDS6675BZ by onsemi is likely another P-Channel PowerTrench MOSFET with similar voltage and current ratings. Search for onsemi's MOSFET offerings within the same voltage range (-30V).

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FDS6675BZ 热门产品

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