BFQ68

DESCRIPTION 

NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. 

It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment.

PINNING

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

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方向：

NPN 4 GHz wideband transistor