MHL21336

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.

• Third Order Intercept: 45 dBm Typ 

• Power Gain: 31 dB Typ (@ f = 2140 MHz) 

• Excellent Phase Linearity and Group Delay Characteristics 

• Ideal for Feedforward Base Station Applications

Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)

Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System)

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方向：

3G Band RF Linear LDMOS Amplifier