IRLMS6802TRPBF

Features

-Ultra Low On-Resistance

-P-Channel MOSFET

-Surface Mount

-Available in Tape & Reel

-Lead-Free

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit

provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.  This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on)  reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

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