MRFE6S9160H

• Characterized with Series Equivalent Large-Signal Impedance Parameters 

• Internally Matched for Ease of Use 

• Qualified Up to a Maximum of 32 VDD Operation 

• Integrated ESD Protection 

• RoHS Compliant 

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Description

Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. 

• Typical Single-Carrier N-CDMA. Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain ó 21 dB Drain Efficiency ó 31% ACPR @ 750 kHz Offset ó -46.8 dBc in 30 kHz Bandwidth 

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.

Maximum Ratings

Thermal Characteristics

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

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RF Power Field Effect Transistors