HMC327MS8GE

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The HMC327MS8G(E) is a cutting-edge GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier designed for optimal performance in the 3 to 4 GHz frequency range. This highly efficient amplifier comes in a convenient surface mount 8 leaded package, featuring an exposed base for enhanced RF and thermal capabilities. With minimal external components required, the HMC327MS8G(E) delivers an impressive 21 dB of gain and a saturated power output of +30 dBm with 45% Power Added Efficiency (PAE) from a modest +5V power supply. Moreover, the amplifier includes a power down feature that enables users to reduce current consumption when the device is not in active use